Scanning Electron Microscopy (SEM) and
X-ray Energy Dispersive Spectroscopy

1.Instruments

Scanning Electron Microscopy (SEM), Model 501, Philips - Holland with EDAX and EBIC attachments.

• The scanning electron microscope (SEM) is used for imaging of surfaces and analysis of small surface features. It provides magnifications of up to 240,000 and high spatial resolution (Guaranteed 6 nm in the secondary electron mode, Al-Au-sputtered specimen).
• Completely PC control upgrade by WinDISS card and software from Pointelectronic GmbH: mesurements of distances, angles, areas, etc. Output files in BMP and TIFF formants.
• High tension accelerating voltage continuously variable from 1.6 kV to 30 kV.
• Dynamic focus
• Scan coils control: of scan rotation, tilt correction and magnification
• Contrast enhancement via electronic image signal differentiation and gamma correction.
• High resolution 7” picture monitor + Polaroid camera.
• TV output for videotape (CCIR B&W) or second monitor.
• Two eucentric Goniometer free working distances: 34 mm (normal working distance) and 12 mm (high resolution working distance)
• 64 pin electrical vacuum feedthrough for electron beam induced current (EBIC) inspection of microelectronic devices or other biasing techniques.

The SEM is operated in several modes:

1. Secondary electrons (SE) for topographical imaging.2. Backscattered electrons (BE) for phase and chemical compositional imaging.

3. Electron beam induced current (EBIC) for defect analysis in semiconductor devices.

4. Energy dispersive x-ray spectroscopy (EDXS)- for chemical elemental analysis.

With SEM a topographical picture (SE) of the surface can be obtained together with a phase chemical (BE) composition picture and elemental chemical (EDXS) analysis mapping at selected points on the surface. These features help to elucidate different problems in R&D of new materials and devices, process and quality control, failure analysis, etc.

Scanning Electron Microscope Technique